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| Item | Technical Property | ||
|---|---|---|---|
| Pure oxygen | High purity oxygen | Ultrapure oxygen | |
| Oxygen (O2) purity (volume fraction)/10-2≥ | 99.995 | 99.999 | 99.9999 |
| Hydrogen (H2) content (volume fraction)/10-6≤ | 1 | 0.5 | 0.1 |
| Argon (Ar) content (volume fraction)/10-6≤ | 10 | 2 | 0.2 |
| Nitrogen (N2) content (volume fraction)/10-6≤ | 20 | 5 | 0.1 |
| Carbon dioxide (CO2) content (volume fraction)/10-6≤ | 1 | 0.5 | 0.1 |
| Total hydrocarbon content (volume fraction) (calculated by methane)/10-6≤ | 2 | 0.5 | 0.1 |
| Water (H2) content (volume fraction)/10-6≤ | 3 | 2 | 0.5 |
Based on the technical properties, oxygen is classified into three grades: Pure oxygen (≥99.995%), High purity oxygen (≥99.999%), and Ultrapure oxygen (≥99.9999%).
For Ultrapure oxygen, the water (H₂O) content is strictly controlled to be less than or equal to 0.5 × 10⁻⁶ (volume fraction).
High purity oxygen has a nitrogen limit of ≤ 5 × 10⁻⁶, whereas Ultrapure oxygen reduces this requirement further to ≤ 0.1 × 10⁻⁶.
The total hydrocarbon content in these gas specifications is calculated in terms of methane equivalence, with limits ranging from ≤ 2 × 10⁻⁶ for Pure oxygen down to ≤ 0.1 × 10⁻⁶ for Ultrapure oxygen.
Semiconductor devices and integrated circuit production require extremely low levels of impurities (like hydrogen, argon, and carbon dioxide) to prevent contamination during manufacturing, making Ultrapure oxygen the ideal choice.
